TCAD Based Analysis of Gate Leakage Current for High-k Gate Stack MOSFET
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چکیده
Scaling of metal-oxide-semiconductor transistors to smaller dimensions has been a key driving force in the IC industry. This work analysis the gate leakage current behavior of nano scale MOSFET based on TCAD simulation. The Sentaurus Simulator simulates the high-k gate stack structure of N-MOSFET for analysis purpose. The impact of interfacial oxide thickness on the gate tunneling current has been investigated as a function of gate voltages for a given equivalent oxide thickness (EOT) of 1.0 nm. It was reported in the results that interfacial oxide thickness plays an important role in reducing the gate leakage current. It is also observed that highk stack gated MOSFET exhibits improved performance in term of Off current and DIBL
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